features trenchfet power mosfet symentrical dual p-channel applications battery switch for portable devices computers ? bus switch ? load switch SI3991DV vishay siliconix new product document number: 72427 s-40575?rev. c, 29-mar-04 www.vishay.com 1 dual p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) ? 30 0.240 @ v gs = ? 10 v ? 1.6 ? 30 0.470 @ v gs = ? 4.5 v ? 1.0 s 2 g 2 d 2 p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm d2 g2 s1 s2 d1 g1 s 1 g 1 d 1 p-channel mosfet ordering information: SI3991DV-t1?e3 marking code: mexxx absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds ? 30 v gate-source v oltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d ? 1.6 ? 1.4 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d ? 1.3 ? 1.1 a pulsed drain current i dm ? 7 a continuous diode current (diode conduction) a i s ? 1 ? 0.72 maximum power dissipation a t a = 25 c p d 1.08 0.80 w maximum power dissipation a t a = 70 c p d 0.69 0.51 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 97 115 maximum junction-to-ambient a steady state r thja 132 155 c/w maximum junction-to-foot (drain) steady state r thjf 78 95 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI3991DV vishay siliconix new product www.vishay.com 2 document number: 72427 s-40575?rev. c, 29-mar-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1 ? 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 a zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v, t j = 55 c ? 5 a on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 10 v ? 5 a drain source on state resistance a r ds( ) v gs = ? 10 v, i d = ? 1.6 a 0.190 0.240 drain-source on-state resistance a r ds(on) v gs = ? 4.5 v, i d = ? 1.0 a 0.375 0.470 forward t ransconductance a g fs v ds = ? 5 v, i d = ? 1.6 a 2.4 s diode forward voltage a v sd i s = ? 1.0 a, v gs = 0 v ? 0.88 ? 1.10 v dynamic b total gate charge q g 2 3 gate-source charge q gs v ds = ? 15 v, v gs = ? 4.5 v, i d = ? 1.6 a 0.75 nc gate-drain charge q gd 1.0 gate resistance r g f = 1 mhz 7.6 turn-on delay time t d(on) 8 13 rise time t r v dd = ? 15 v, r l = 15 16 25 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d ? 1 a, v gen = ? 10 v, r g = 6 10 16 ns fall time t f 12 20 source-drain reverse recovery time t rr i f = ? 1.00 a, di/dt = 100 a/ s 18 39 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 1 2 3 4 5 6 7 012345 0 1 2 3 4 5 6 7 0123456 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d v gs = 10 thru 6 v 4 v t c = ? 55 c 125 c 3 v 25 c 5 v
SI3991DV vishay siliconix new product document number: 72427 s-40575?rev. c, 29-mar-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.00 0.15 0.30 0.45 0.60 0.75 012345678 0 40 80 120 160 200 0 6 12 18 24 30 on-resistance vs. drain current v ds ? drain-to-source voltage (v) c ? capacitance (pf) ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance v gs = 4.5 v c oss c iss v gs = 10 v c rss 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs on-resistance vs. junction temperature v gs = 10 v i d = 1.6 a t j ? junction temperature ( c) v ds = 15 v i d = 1.6 a 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 t j = 25 c t j = 150 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s 0.00 0.14 0.28 0.42 0.56 0.70 0246810 v gs ? gate-to-source voltage (v) on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) i d = 1.6 a r ds(on) ? on-resiistance (normalized)
SI3991DV vishay siliconix new product www.vishay.com 4 document number: 72427 s-40575?rev. c, 29-mar-04 typical characteristics (25 c unless noted) ? 0.4 ? 0.2 0.0 0.2 0.4 0.6 ? 50 ? 25 0 25 50 75 100 125 150 threshold voltage t j ? temperature ( c) i d = 250 a variance (v) v gs(th) safe operating area, junction-to-case v ds ? drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 1 ms ? drain current (a) i d 0.1 t c = 25 c single pulse 10 ms 100 ms dc i dm limited i d(on) limited r ds(on) limited bv dss limited 10 s, 1 s normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 132 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.001 0 1 20 25 5 15 10 0.01 power (w) single pulse power, junction-to-ambient time (sec) 0.1 10
SI3991DV vishay siliconix new product document number: 72427 s-40575?rev. c, 29-mar-04 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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